Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 32; no. 1; pp. 21 - 24
• Main Authors: Atkinson, P., Ward, M.B., Bremner, S.P., Anderson, D., Farrow, T., Jones, G.A.C., Shields, A.J., Ritchie, D.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2006; Elsevier
• Subjects: Atomic force microscopy; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Molecular beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dot; Quantum dots; Surface treatments; Molecular beam epitaxy; Atomic force microscopy; Quantum dot; 81.15.Hi; 68.37.Pa; 81.07.Ta; Patterning; Gallium arsenides; Reactive ion etching; Electron beam lithography; Quantum dots; Luminescence; Quantum dot; Molecular beam epitaxy; Atomic force microscopy; Indium arsenides; 81.07.Ta; 81.15.Hi; 68.37.Pa
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2005.12.007

Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed > 50 % single dot occupancy for holes ∼ 60 nm wide and ∼ 35 nm deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.