Growth of ZnTe films by ionized cluster beam epitaxy at low temperature

• Published in: Thin solid films Vol. 274; no. 1; pp. 46 - 49
• Main Authors: Feng, Jia You, Zheng, Yi, Zhang, Fang Wei, Fan, Yu Dian
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.03.1996; Elsevier Science
• Subjects: Clusters; Condensed matter: structure, mechanical and thermal properties; Epitaxy; Exact sciences and technology; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Zinc; Clusters; Epitaxy; Zinc; Thin films; Temperature dependence; Composition; Epitaxial layers; Growth rate; Electron diffraction; Zinc tellurides; Molecular beam epitaxy; XRD; Experimental study; TEM
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(95)07084-2

Lattice-mismatched ZnTe(100) epilayers and highly (111)-oriented ZnTe film were grown on GaAs(100), Si(100), and glass substrates, respectively, by ionized cluster beam epitaxy at a growth rate of up to 1.2 nm s −1. From the analysis of X-ray diffraction and reflection high-energy electron diffraction, the grown layers were shown to be ZnTe epitaxial films. It was found that the crystalline quality of the epilayers depended on the substrate temperature. At a low substrate temperature of 300 °C, the optimum films on GaAs, Si and glass exhibit full width at half maximum (FWHM) values of X-ray rocking curves to be 110, 148 and 1417 arc sec, respectively.