Role of electron–electron interactions in magnetoresistance oscillations in high-mobility 2D electron systems

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 42; no. 4; pp. 1081 - 1083
• Main Authors: Hatke, A.T., Zudov, M.A., Pfeiffer, L.N., West, K.W.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2010; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Hall field-induced resistance oscillations; Microwave-induced resistance oscillations; Nonlinear transport; Phonon-induced resistance oscillations; Physics; Quantum wells; Two-dimensional electron system; Microwave-induced resistance oscillations; Two-dimensional electron system; Phonon-induced resistance oscillations; Hall field-induced resistance oscillations; Nonlinear transport; Two-dimensional systems; Gallium arsenides; Microwave radiation; Quantum wells; Aluminium Gallium Arsenides Mixed; Oscillations; High temperature; Electron-electron interactions; Temperature effects; Electron mobility; Non linear effect; Magnetoresistance; III-V semiconductors
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.11.041

We studied the temperature dependence of nonlinear magnetoresistivity oscillations in high-mobility two-dimensional electron systems using a current-sweep method in a temperature range from 1.5 to 4.0 K. Consistent with previous studies we found that the primary source of the oscillation decay with increasing temperature is the modification of the quantum scattering rate entering the Dingle factor. These results provide further evidence that the high temperature decay of magnetoresistance oscillations appearing in the second order of the Dingle factor originates primarily from the electron–electron interaction effects.