Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

• Published in: Solid-state electronics Vol. 37; no. 4; pp. 665 - 667
• Main Authors: Litwin-Staszewska, E., Kobbi, F., Kamal-Saadi, M., Dur, D., Skierbiszewski, C., Sibari, H., Zekentes, K., Mosser, V., Raymond, A., Knap, W., Robert, J.L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.04.1994; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transport process; Quantum well; Gallium Indium Arsenides Mixed; Modeling; Optical properties

Combined studies of GaAlAs/GaInAs/GaAs pseudomorphic structures have been performed by means of transport under hydrostatic pressure, luminescence and cyclotron resonance emission experiments. The structures investigated were 130 Å quantum wells. They were δ-doped outside of the quantum well, with t...