Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

Combined studies of GaAlAs/GaInAs/GaAs pseudomorphic structures have been performed by means of transport under hydrostatic pressure, luminescence and cyclotron resonance emission experiments. The structures investigated were 130 Å quantum wells. They were δ-doped outside of the quantum well, with t...

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Published inSolid-state electronics Vol. 37; no. 4; pp. 665 - 667
Main Authors Litwin-Staszewska, E., Kobbi, F., Kamal-Saadi, M., Dur, D., Skierbiszewski, C., Sibari, H., Zekentes, K., Mosser, V., Raymond, A., Knap, W., Robert, J.L.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.04.1994
Elsevier Science
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Summary:Combined studies of GaAlAs/GaInAs/GaAs pseudomorphic structures have been performed by means of transport under hydrostatic pressure, luminescence and cyclotron resonance emission experiments. The structures investigated were 130 Å quantum wells. They were δ-doped outside of the quantum well, with the spacer thickness ranging between 20 and 60 Å. These structures allowed us to study the influence of the carrier density N s on mobility and on the position of the Fermi level E F above the first electrical sub-hand E 0. By using pressure and illumination, we changed N s from 0.5 to 1.8 × 10 12 cm −2. In this range, only the first electric sub-band is populated. A strong decrease of mobility at higher concentrations was shown and depended essentially on correlation effects. High magnetic field transport measurements confirmed that only the lowest sub-band was populated. Moreover, cyclotron resonance emission gave the effective mass as a function of the carrier density in the well. On this basis, the importance of the non parabolicity effect was estimated. All these results were interpreted within the framework of the variational method leading to a determination of the most important physical parameters describing this system.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(94)90271-2