Strain and piezoelectric effects on the phonon frequencies in heterostructures

It is shown that the strain characterization of heterostructures based on phonon frequency shifts is modified when piezoelectric fields are present. The well-known phenomenological theory and Raman practice for obtaining the strain phonon deformation potentials, i.e., parameters connecting frequency...

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Bibliographic Details
Published inSolid state communications Vol. 84; no. 1; pp. 47 - 50
Main Author Anastassakis, E.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.1992
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Other topics in electronic structure and electrical properties of surfaces, interfaces, and thin films
Physics
Frequency shift
Deformation potential
Electric field
Phonon
Theoretical study
Piezoelectricity
Heterojunction
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Summary:It is shown that the strain characterization of heterostructures based on phonon frequency shifts is modified when piezoelectric fields are present. The well-known phenomenological theory and Raman practice for obtaining the strain phonon deformation potentials, i.e., parameters connecting frequency shifts with strains, are extended to include electric-field phonon deformation potentials. Both sets of deformation potentials can be obtained from combined Raman experiments under hydrostatic pressure, performed on strained layers grown along [001], [110], and [111]. Expressions are given for the frequency shifts in terms of the deformation potentials, for all scattering configurations allowed by selection rules.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(92)90292-H