Experimental verification of the extended-emitter concept for phosphorus-implanted self-aligned polysilicon-contacted bipolar transistors

The effective surface recombination velocity of different polysilicon contacts is inferred from a theoretical-experimental comparison of base (emitter recombination) currents as a function of temperature. For the polysilicon contacts, specially processed to break up the residual interfacial layer an...

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Bibliographic Details
Published inSolid-state electronics Vol. 31; no. 7; pp. 1127 - 1138
Main Authors Burk, D.E, Yung, S.-Y
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.07.1988
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Characterization
Semiconductor metal contact
Integrated circuit
Polycrystal
Transistor
Silicon
Transistor emitter
Manufacturing
Modeling
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Summary:The effective surface recombination velocity of different polysilicon contacts is inferred from a theoretical-experimental comparison of base (emitter recombination) currents as a function of temperature. For the polysilicon contacts, specially processed to break up the residual interfacial layer and to have columnar grains, the functional dependence of the inferred surface recombination velocity on temperature is demonstrated to be, within the experimental error, that for a contact which acts as an extension of the underlying emitter. In contrast, data from contacts, having an intentionally introduced interfacial layer, are demonstrated to be in disagreement with the extended-emitter concept.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90272-9