Scalable silicon nanowire photodetectors

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 38; no. 1; pp. 64 - 66
• Main Authors: Servati, P., Colli, A., Hofmann, S., Fu, Y.Q., Beecher, P., Durrani, Z.A.K., Ferrari, A.C., Flewitt, A.J., Robertson, J., Milne, W.I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2007; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Nanocomposites; Nanowires; Optoelectronic devices; Photodetectors; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Schottky diodes; Nanocomposites; 81.07.−b; Photodetectors; Nanowires; 73.63.−b; 78.67.−n; Nanowires; Nanocomposites; Photodetectors; Schottky diodes; Thin film device; Voltage current curve; Nanocomposite; Silicon; Photolithography; Photodetector; 81.07.-b; 73.63.-b; 78.67.-n; Schottky barrier
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2006.12.054

This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.