Patterning of an electron beam resist with a scanning tunnelling microscope operating in air

A scanning tunnelling microscope operating in air is employed to expose a 50 nm thick electron beam sensitive resist with low energetic electrons. We demonstrate that it is possible to expose the resist under ambient conditions with voltages of ~50 V without observable modification of the resist sur...

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Bibliographic Details
Published inThin solid films Vol. 264; no. 2; pp. 259 - 263
Main Authors Kragler, K., Günther, E., Leuschner, R., Falk, G., von Seggern, H., Saemann-Ischenko, G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 15.08.1995
Elsevier Science
Subjects
Condensed matter: structure, mechanical and thermal properties
Electron beam
Exact sciences and technology
Exposure
Lithography
Physics
Scanning tunnelling microscopy
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Electron beam
Exposure
Lithography
Scanning tunnelling microscopy
Image forming
Image analysis
Microscopy
Electron irradiation
Surface analysis
Experimental study
STM
Surface states
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Summary:A scanning tunnelling microscope operating in air is employed to expose a 50 nm thick electron beam sensitive resist with low energetic electrons. We demonstrate that it is possible to expose the resist under ambient conditions with voltages of ~50 V without observable modification of the resist surface after exposure prior to development. A resolution of 150 nm has been achieved. The dose for complete exposure has been determined as 10 mC cm −2. This is about 1000 times higher than the value for conventional high-voltage electron beam lithography.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)05817-6