Hydrogen and deuterium migration in annealed plasma-deposited silicon nitride films

The incorporation of hydrogen in nearly stoichiometric silicon nitride deposited by plasma enhanced chemical vapour deposition is investigated by infrared spectroscopy. During the deposition, deuterium is added to the silane, nitrogen and helium mixture. After annealing up to 1000 °C, some films sho...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 258; no. 1-2; pp. 1 - 4
Main Authors Savall, C., Bruyère, J.C.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.03.1995
Elsevier Science
Subjects
Annealing
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Deuterium
Exact sciences and technology
Hydrogen
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Plasma processing and deposition
Deuterium
Annealing
Plasma processing and deposition
Hydrogen
CVD
Thin films
Silanes
Infrared spectrometry
Silicon nitrides
Experimental study
Hydrogenation
Heat treatments
Plasma deposition
Online AccessGet full text

Cover

More Information
Summary:The incorporation of hydrogen in nearly stoichiometric silicon nitride deposited by plasma enhanced chemical vapour deposition is investigated by infrared spectroscopy. During the deposition, deuterium is added to the silane, nitrogen and helium mixture. After annealing up to 1000 °C, some films show a very large increase of the 2200 cm−1 absorption peak. We conclude from analysis of isotopic substitution that the free hydrogen atom does not contribute to building new SiH bonds. This result agrees with our previous conclusion on a continuous and large change in the oscillator strength of the SiH stretching mode.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)09476-4