Hydrogen and deuterium migration in annealed plasma-deposited silicon nitride films
The incorporation of hydrogen in nearly stoichiometric silicon nitride deposited by plasma enhanced chemical vapour deposition is investigated by infrared spectroscopy. During the deposition, deuterium is added to the silane, nitrogen and helium mixture. After annealing up to 1000 °C, some films sho...
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Published in | Thin solid films Vol. 258; no. 1-2; pp. 1 - 4 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
15.03.1995
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | The incorporation of hydrogen in nearly stoichiometric silicon nitride deposited by plasma enhanced chemical vapour deposition is investigated by infrared spectroscopy. During the deposition, deuterium is added to the silane, nitrogen and helium mixture. After annealing up to 1000 °C, some films show a very large increase of the 2200 cm−1 absorption peak. We conclude from analysis of isotopic substitution that the free hydrogen atom does not contribute to building new SiH bonds. This result agrees with our previous conclusion on a continuous and large change in the oscillator strength of the SiH stretching mode. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(94)09476-4 |