Characterization of laser-induced damage in silicon solar cells during selective ablation processes

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 178; no. 9; pp. 682 - 685
• Main Authors: Poulain, G., Blanc, D., Focsa, A., De Vita, M., Fraser, K., Sayad, Y., Lemiti, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.05.2013
• Subjects: Ablation; Damage; Dielectric ablation; Laser processing; Lasers; Materials selection; Minority carrier lifetime; Photoluminescence; Silicon; Silicon nitride; Silicon solar cells; Silicon substrates; Solar cells; Laser processing; Silicon solar cells; Minority carrier lifetime; Dielectric ablation; Photoluminescence
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2012.11.015

Selective laser ablation of silicon nitride layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed with a nanosecond UV laser at various energy densities ranging from 0.2 to 1.5Jcm−2. Optical microscopy was used as a simple mean to assess the ablation threshold that was correlated to the temperature at the interface between the silicon nitride coating and the silicon substrate. Minority carrier lifetime measurements were performed using a microwave photo-conductance decay technique. Band to band photoluminescence spectroscopy proved to be a sensitive technique to qualify the laser-induced damage to the silicon substrate. The crystalline structure of silicon seemed to be maintained after silicon nitride ablation as shown by UV reflectivity measurements. Laser parameters corresponding to fluences of around 0.4Jcm−2 were found to achieve selective ablation of SiNx without causing detrimental damage to the surrounding material.