Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

• Published in: Journal of applied physics Vol. 123; no. 16
• Main Authors: Timerkaeva, Dilyara, Attaccalite, Claudio, Brenet, Gilles, Caliste, Damien, Pochet, Pascal
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 28.04.2018
• Subjects: Condensed Matter; Materials Science; Physics
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.5010269

The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.