Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 62; pp. 55 - 58
• Main Authors: Yang, G.F., Xie, F., Dong, K.X., Chen, P., Xue, J.J., Zhi, T., Tao, T., Liu, B., Xie, Z.L., Xiu, X.Q., Han, P., Shi, Y., Zhang, R., Zheng, Y.D.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.08.2014; Elsevier
• Subjects: AlGaN; Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Numerical simulation; Optoelectronic devices; Physics; Quantum wells; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Staggered quantum well; UV LED; Numerical simulation; UV LED; Staggered quantum well; AlGaN; Quantum well; Output power; Charge carrier density; Wave function; Radiative recombination; III-V compound; Light emitting diode; Ultraviolet radiation; Charge carrier recombination; Optoelectronic device; Nanostructured materials; Charge carrier injection; III-V semiconductors
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2014.04.014

The AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with specific design of staggered AlGaN quantum wells are investigated numerically. The proposed UV LEDs with Al0.45Ga0.55N–Al0.5Ga0.5N–Al0.45Ga0.55N and Al0.5Ga0.5N–Al0.45Ga0.55N–Al0.5Ga0.5N staggered quantum well layers exhibit significant improvement for the light output power and carrier injection efficiency compared with the conventional AlGaN UV LED. The enhanced performance of the designed LEDs is explained by the simulated distribution of carrier concentration, radiative recombination rate and wave function overlap in the quantum wells. [Display omitted] •Staggered AlGaN quantum wells are designed for UV LEDs.•The electron and hole wave function overlap is improved in the designed UV LEDs.•The enhanced injection efficiency of carrier has been obtained.