Fabrication and characteristics of photodiode based on ZnO nanowire arrays and spray-coated regioregular P3HT layers

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 48; pp. 128 - 132
• Main Authors: Yuan, Zhaolin, Ren, Yajie
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2013; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Thiophene derivative polymer; Illumination; Nanowires; Photodiodes; Arrays; IV characteristic; Diodes; Nanostructured materials; Electrical characteristic
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2012.12.011

A photodiode based on well-aligned ZnO nanowire arrays (ZNAs) and spray-coated regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) layers hybrid hetero junctions was fabricated, and its electrical characteristics in dark and under illumination with a solar simulator were investigated. Current–voltage (I–V) data of ITO/ZNAs/P3HT/Ag device in dark and under illumination showed typical diode characteristics. A rectification ratio (RR) of 22.7 at 1.7V and a low turn-on voltage of 0.4V in dark were obtained. Also, the photodiode with high photo-response in the order of 0.31A/W at -2V using 80mW/cm2 illumination power was observed. Upon increasing illumination power from 40 to 100mW/cm2, the RR value for the photodiode continuously was improved with a highest value of 12.5. ► Well-aligned ZnO nanowire arrays were synthesized at low temperature. ► Regioregular P3HT layer was deposited by low-cost spray coating technique. ► The photodiode has good rectifying properties in dark and under illumination. ► The photodiode has high photo-response.