Fully gravure and ink-jet printed high speed pBTTT organic thin film transistors
Organic thin film transistors with channel lengths below 20 μm have been fabricated on plastic substrates using a combination of rotogravure and ink-jet printing exclusively. Gravure is utilized to deposit thin, smooth, and narrow metal lines ideal for gate electrodes; a poly(4-vinylphenol) dielectr...
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Published in | Organic electronics Vol. 11; no. 12; pp. 2037 - 2044 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.12.2010
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Organic thin film transistors with channel lengths below 20
μm have been fabricated on plastic substrates using a combination of rotogravure and ink-jet printing exclusively. Gravure is utilized to deposit thin, smooth, and narrow metal lines ideal for gate electrodes; a poly(4-vinylphenol) dielectric; and a poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) semiconductor using a heated roll. A novel fluid guiding technique is used to maintain closely spaced ink-jet printed source and drain (S/D) contacts. Together these printing processes yield aggressively scaled yet easily manufacturable TFTs with operating frequencies of 18
kHz. |
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ISSN: | 1566-1199 1878-5530 |
DOI: | 10.1016/j.orgel.2010.09.003 |