Device processing and analysis of high efficiency GaAs cells

Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm 2 and 4.1 cm 2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also been produced. These high efficiencies result b...

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Published inSolar cells Vol. 24; no. 1; pp. 103 - 115
Main Authors Tobin, S.P., Vernon, S.M., Bajgar, C., Geoffroy, L.M., Keavney, C.J., Sanfacon, M.M., Haven, V.E.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 01.05.1988
Elsevier Sequoia
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar thermal conversion
Solar cell
Gallium Arsenides
Manufacturing process
Analysis
High efficiency
Loss
Concentrated solar radiation
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Abstract Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm 2 and 4.1 cm 2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also been produced. These high efficiencies result both from improved processing techniques (image-reversal photolithography and optimized double-layer antireflection coatings) as well as better understanding of cell loss mechanisms. Detailed loss analyses are presented for several types of cells. We have discovered deleterious effects of electron-beam evaporated coatings, which can be avoided with thermal evaporation. Although improvements in J sc account for the efficiency gains in these cells, J sc still remains the parameter with the largest room for further improvement.
AbstractList Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm 2 and 4.1 cm 2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also been produced. These high efficiencies result both from improved processing techniques (image-reversal photolithography and optimized double-layer antireflection coatings) as well as better understanding of cell loss mechanisms. Detailed loss analyses are presented for several types of cells. We have discovered deleterious effects of electron-beam evaporated coatings, which can be avoided with thermal evaporation. Although improvements in J sc account for the efficiency gains in these cells, J sc still remains the parameter with the largest room for further improvement.
Author Bajgar, C.
Geoffroy, L.M.
Keavney, C.J.
Tobin, S.P.
Sanfacon, M.M.
Vernon, S.M.
Haven, V.E.
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Cites_doi 10.1016/0379-6787(86)90016-5
10.1063/1.321330
10.1063/1.89461
10.1109/EDL.1984.25905
10.1063/1.339624
10.1063/1.337426
10.1109/T-ED.1985.21997
10.1063/1.325265
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Issue 1
Keywords Solar cell
Gallium Arsenides
Manufacturing process
Analysis
High efficiency
Loss
Concentrated solar radiation
Language English
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Elsevier Sequoia
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Snippet Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm 2 and 4.1 cm 2...
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SubjectTerms Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar thermal conversion
Title Device processing and analysis of high efficiency GaAs cells
URI https://dx.doi.org/10.1016/0379-6787(88)90040-3
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