Device processing and analysis of high efficiency GaAs cells
Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm 2 and 4.1 cm 2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also been produced. These high efficiencies result b...
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Published in | Solar cells Vol. 24; no. 1; pp. 103 - 115 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Lausanne
Elsevier B.V
01.05.1988
Elsevier Sequoia |
Subjects | |
Online Access | Get full text |
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Summary: | Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm
2 and 4.1 cm
2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also been produced. These high efficiencies result both from improved processing techniques (image-reversal photolithography and optimized double-layer antireflection coatings) as well as better understanding of cell loss mechanisms. Detailed loss analyses are presented for several types of cells. We have discovered deleterious effects of electron-beam evaporated coatings, which can be avoided with thermal evaporation. Although improvements in
J
sc account for the efficiency gains in these cells,
J
sc still remains the parameter with the largest room for further improvement. |
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ISSN: | 0379-6787 1878-2655 |
DOI: | 10.1016/0379-6787(88)90040-3 |