A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)

• Published in: Surface science Vol. 274; no. 2; pp. 263 - 269
• Main Authors: Armstrong, S.R., Hoare, R.D., Pemble, M.E., Povey, I.M., Stafford, A., Taylor, A.G., Joyce, B.A., Neave, J.H., Klug, D.R., Zhang, J.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.08.1992; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Semiconductor materials; Epitaxial film; Experimental study; Inorganic compound; Gallium Arsenides; Aluminium Arsenides; Reflection high energy electron diffraction; Anisotropy; Molecular beam condensation; Indium Arsenides; Optical reflection; Heterojunction
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(92)90530-J

MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface “dimer” bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.