Fabrication and characterization of Si/SiGe nanometer structures

• Published in: Microelectronic engineering Vol. 27; no. 1; pp. 83 - 86
• Main Authors: Gondermann, J., Spangenberg, B., Ko¨ster, T., Hadam, B., Roskos, H.G., Kurz, H., Brunner, J., Schittenhelm, P., Abstreiter, G., Goßner, H., Eisele, I.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.1995; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Binary compound; Electron beam lithography; Photoluminescence; Nanostructure; Experimental study; Germanium Silicides; Excitonic process; Microelectronic fabrication; Reactive ion etching; Molecular beam condensation; Quantum wire; Silicon; Comparative study
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/0167-9317(94)00061-X

We investigate two different techniques for fabrication of nanometer structures in the Si/SiGe system. The additive approach is based on local molecular-beam-epitaxy growth through microshadow masks with lateral dimensions down to 200 nm. Mesas of high crystalline quality are achieved because of the fact that the mesas are not in touch with the surrounding mask material. We observe clear exitonic emission from the SiGe wires. The subtractive technique combines high-resolution electron-beam lithography with reactive-ion-etching pattern transfer. Our anisotropic process is based on SF 6/O 2-plasma etching at a reduced substrate temperature of −20°C. We fabricate structures with lateral widths from 4 μm down to 50 nm. Photoluminescence is detected for structures as small as 400 nm.