A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films

Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes o...

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Bibliographic Details
Published inMaterials chemistry and physics Vol. 45; no. 2; pp. 185 - 188
Main Authors Mudryi, A.V., Patuk, A.I., Shakin, I.A., Korshunov, F.P., Zuev, V.A.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.08.1996
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Defects
Defects and impurities in crystals; microstructure
Doping and impurity implantation in other materials
Exact sciences and technology
Luminescence
Physics
Silicon on sapphire films
Strain
Structure of solids and liquids; crystallography
Silicon on sapphire films
Luminescence
Defects
Strain
Crystal defects
Ion implantation
Internal strains
Photoluminescence
Experimental study
Thin films
Gamma irradiation
Ion irradiation
Internal stress
Electron irradiation
Sapphire
Optical properties
Silicon
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Summary:Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes of interaction with radiation damage. Data on the temperature stability of luminescence centres are given. The residual compressive stress in SOS films is estimated using the photoluminescence method.
ISSN:0254-0584
1879-3312
DOI:10.1016/0254-0584(96)80101-5