On the mobility-lifetime product in GaAs determined by photorefractive measurements

We analyze the use of the photorefractive beam coupling gain as a function of grating period in determining the mobility-lifetime product of photoexcited electrons in semi-insulating GaAs. Results of numerical analysis of the modulation dependence of nonstationary recording conditions of an external...

Full description

Saved in:
Bibliographic Details
Published inOptical materials Vol. 4; no. 2; pp. 252 - 255
Main Authors Brost, George A., Magde, Kevin M.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 1995
Elsevier Science
Subjects
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Gallium arsenides
Inorganic compounds
Photorefractive effect
Semiconductor materials
Investigation method
Carrier lifetime
Carrier mobility
Online AccessGet full text

Cover

More Information
Summary:We analyze the use of the photorefractive beam coupling gain as a function of grating period in determining the mobility-lifetime product of photoexcited electrons in semi-insulating GaAs. Results of numerical analysis of the modulation dependence of nonstationary recording conditions of an external ac electric field are applied to GaAs. It is shown that the mobility-lifetime product measured using these enhancement techniques is subject to error when interpreted in terms of the linearized theory. Previous two-beam coupling experimental results are reexamined and shown to provide an inconclusive measurement of the mobility-lifetime product.
ISSN:0925-3467
1873-1252
DOI:10.1016/0925-3467(94)00069-7