Improved MOS capacitor measurements using the Q-C method

We describe a method for determining band bending vs gate bias, doping profile and oxide charge density by simultaneous measurement of charge and high frequency MOS capacitance as a function of applied voltage. This charge-capacitance or Q-C method is compared with the usual MOS measurements for the...

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Bibliographic Details
Published inSolid-state electronics Vol. 27; no. 11; pp. 963 - 975
Main Authors Brews, J.R., Nicollian, E.H.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.01.1984
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Measurement
MOS structure
Capacitance
High frequency
MOS capacity
Voltage
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Summary:We describe a method for determining band bending vs gate bias, doping profile and oxide charge density by simultaneous measurement of charge and high frequency MOS capacitance as a function of applied voltage. This charge-capacitance or Q-C method is compared with the usual MOS measurements for the same properties. We find the Q-C method is more accurate and more routine than methods presently in use. In addition, accurate and systematic procedures are introduced for (1) finding the additive constant in the band bending vs gate bias relation, (2) eliminating interface trap error in the doping profile, (3) extrapolation of the doping profile to the interface in the region inaccessible to measurement, (4) correction of oxide charge and work-function determination for interface trap errors and effects of nonuniform doping profiles.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(84)90070-4