Nanoelectronic content-addressable memory

A novel nanoelectronic single-electron content addressable memory is designed and simulated. The proposed memory has three important building blocks: a storage block, a comparison block and an addressing block. These building blocks were built based on single-electron circuits such as Reset-Set latc...

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Bibliographic Details
Published inMicroelectronics Vol. 45; no. 8; pp. 1118 - 1124
Main Authors de Alencar Braga, Bianca Maria Matos, Guimarães, Janaina Gonçalves
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2014
Subjects
Blocking
Circuits
Computer simulation
Content addressable
Latches
Logic circuits
Memory
Nanoelectronic
Nanostructure
Neural network
Neural networks
Single-electron
Stability
Neural network
Logic circuits
Nanoelectronic
Memory
Single-electron
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Summary:A novel nanoelectronic single-electron content addressable memory is designed and simulated. The proposed memory has three important building blocks: a storage block, a comparison block and an addressing block. These building blocks were built based on single-electron circuits such as Reset-Set latches, exclusive-or gates and a WTA neural network. Each one of the building blocks was separately adjusted to provide room temperature operation before being connected together. Some analyses concerning stability of each block and of the whole memory circuit were made. The nanoelectronic memory was successfully validated by simulation.
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ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2014.05.022