Indium-tin-oxides (ITO) thick films for solar cells

Films of transparent semiconducting oxides (indium-tin-oxide) have been prepared by conventional thick-film printing methods. When fired at approximately 650°C in a furnace with a continuous air flow, a continuous thick film of the semiconducting oxides, about 3000 Å thick is formed. The sheet resis...

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Bibliographic Details
Published inSolar energy materials Vol. 13; no. 2; pp. 85 - 96
Main Authors Saim, H.B., Campbell, D.S., Avaritsiotis, J.A.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.1986
Elsevier
North-Holland
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Annealing
Europe
Tin Indium Oxides Mixed
United Kingdom
Great britain
Experimental study
Properties
Thin film
Serigraphy
Solar cell
Vacuum
Equipment
Preparation
Solar energy
Influence
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Summary:Films of transparent semiconducting oxides (indium-tin-oxide) have been prepared by conventional thick-film printing methods. When fired at approximately 650°C in a furnace with a continuous air flow, a continuous thick film of the semiconducting oxides, about 3000 Å thick is formed. The sheet resistance of the as-deposited film is about 6 kΩ/□ which can be reduced to about 300 Ω/□ upon heat-treatment at 300°C in a vacuum. A slight increase of the sheet resistance to 1 kΩ/□ occurs on ageing at ambient atmosphere for a few days. Investigations were done to characterise the electrical, optical, structural and compositional properties of the films particularly with regard to the effects of vacuum treatment of the films. The feasibility of forming diodes with silicon wafers which can eventually lead to the fabrication ofSIS solar cells has been examined and will be reported subsequently.
ISSN:0165-1633
DOI:10.1016/0165-1633(86)90037-7