Very large bandwidth continuous time analogue equaliser in InP DHBT for beyond-100 GBd optical communication applications

• Published in: Electronics letters Vol. 52; no. 2; pp. 135 - 137
• Main Authors: Mettetal, R, Dupuy, J.-Y, Jorge, F, Riet, M, Nodjiadjim, V, Konczykowska, A, Ouslimani, A
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 21.01.2016
• Subjects: Amplifiers; Analogue; Bandwidth; beyond‐100 GBd optical communication; bit rate 205 Gbit/s; continuous time analogue equaliser; differential amplifiers; differential cascode amplifier cell; double heterojunction bipolar transistors; equalisers; frequency 95 GHz; Heterojunction bipolar transistors; III‐V semiconductors; indium compounds; indium phosphide; Indium phosphides; InP; InP DHBT; Noise levels; Optical communication; Semiconductor devices; Simulation; very large bandwidth; InP DHBT; continuous time analogue equaliser; indium compounds; indium phosphide; InP; beyond-100 GBd optical communication; heterojunction bipolar transistors; differential cascode amplifier cell; equalisers; very large bandwidth; frequency 95 GHz; differential amplifiers; double heterojunction bipolar transistors; optical communication; bit rate 205 Gbit/s; III-V semiconductors
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2015.3364

The study, design and measurement of a continuous time analogue equaliser based on a differential cascode amplifier cell, using indium phosphide double heterojunction bipolar transistors (DHBTs) reaching an fT/fmax of 370/340 GHz are reported. A bandwidth of more than 110 GHz is achieved and a peaking of 18 dB at 95 GHz is reached. Simulations demonstrated an equalisation at 205 Gbit/s. This is believed to be the highest frequency peaking reported to date.