Preparation, characterization and performance of Ti1−xAlxN/Ag/Ti1−xAlxN low-emissivity films
•Ti1−xAlxN/Ag/Ti1−xAlxN sandwich structure low-emissivity films were prepared by radio frequency reactive magnetron sputtering.•The corrosion behavior of the Ti1−xAlxN coatings was investigated using potentiodynamic polarization measurements.•The multilayer films exhibit an excellent visible light t...
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Published in | Applied surface science Vol. 293; pp. 259 - 264 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
28.02.2014
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | •Ti1−xAlxN/Ag/Ti1−xAlxN sandwich structure low-emissivity films were prepared by radio frequency reactive magnetron sputtering.•The corrosion behavior of the Ti1−xAlxN coatings was investigated using potentiodynamic polarization measurements.•The multilayer films exhibit an excellent visible light transmittance as high as 89.5% at λ=550nm, and it also presents a remarkable high infrared reflectivity exceeding 96% in the 2.5∼25μm range.
In this paper, Ti1−xAlxN/Ag/Ti1−xAlxN sandwich structure low-emissivity (Low-E) films were prepared by radio frequency reactive magnetron sputtering (RF-MS) on glass substrates. The morphology, chemical state and performance of the film system were characterized by FIB-SEM, XPS, FT-IR, UV–vis spectrophotometer and electrochemical workstation. The results showed that the multilayer films exhibit an excellent visible light transmittance (T%>85% at λ=550nm) and remarkable high infrared reflectivity (R%>96% in the 2.5∼25μm range). The Ti1−xAlxN dielectric-layer could not only increase transmittance in the visible light range of Ag film based on an anti-reflection effect, but also modify the intrinsic color of Ag film from sapphire to total color neutrality. In addition, Ti1−xAlxN layer could enhance the chemical stability of the Ag film. In principle, the approach to obtain Ti1−xAlxN/Ag/Ti1−xAlxN sandwich structure in our work could provide an alternative way to fabricate outstanding Low-E films. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2013.12.146 |