Dominant boron-related radiation defect in silicon revealed by hydrogenation

• Published in: Physica. B, Condensed matter Vol. 340-342; pp. 528 - 531
• Main Authors: Yarykin, N, Feklisova, O.V, Weber, J
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31.12.2003
• Subjects: Hydrogen; Radiation defects; Silicon; 61.72.Ji; 71.55.Cn; 61.82.Fk; Silicon; Radiation defects; Hydrogen
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2003.09.142

It is observed in the boron-doped crystals irradiated with 5.5MeV electrons that the H3-center with a donor level at Ev+0.535eV is formed by addition of one hydrogen atom to a radiation defect—the H3 precursor. Although the H3 precursor still escapes detection with electrical methods, its introduction rate θ can be determined via the maximum concentration of the H3-centers. θ linearly increases with boron concentration in low-doped samples indicating one boron atom in the complex, and saturates at θ≃0.1cm−1 for [B]=(3−20)×1015cm−3. Analysis of the interstitial/vacancy balance reveals the interstitial nature of the defect. The identification of the H3 precursor as the BiCs pair and the H3-center as a BCH complex is in a good agreement with the available experimental data.