12-inch X-ray optics based on MEMS process

A large size X-ray optic with a 12-inch silicon wafer is fabricated to increase X-ray collecting power. The 12-inch silicon optic is formed by a combination of photolithography, dry etching and chemical mechanical polishing techniques. Furthermore, in order to smooth surfaces of the etched sidewalls...

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Bibliographic Details
Published inMicrosystem technologies : sensors, actuators, systems integration Vol. 23; no. 7; pp. 2815 - 2821
Main Authors Ishikawa, Kumi, Ezoe, Yuichiro, Numazawa, Masaki, Ogawa, Tomohiro, Sato, Mayu, Nakamura, Kasumi, Ohashi, Takaya, Mitsuda, Kazuhisa, Maeda, Ryutaro, Hiroshima, Hiroshi, Kurashima, Yuichi, Noda, Daiji
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.07.2017
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Summary:A large size X-ray optic with a 12-inch silicon wafer is fabricated to increase X-ray collecting power. The 12-inch silicon optic is formed by a combination of photolithography, dry etching and chemical mechanical polishing techniques. Furthermore, in order to smooth surfaces of the etched sidewalls used as X-ray reflection plane, the optic is annealed with high temperature. To verify the surface profile, X-ray reflectivity measurements are conducted with Al K α 1.49 keV and reflected X-rays are detected for the first time. From the X-ray reflectivity data, it is suggested that the optic has ridge and slope structures on the sidewall surfaces, which decrease the reflection region by shadowing a part of the sidewall surface and changing a practical incident angle. An estimated surface roughness is ∼ 2 nm rms, which is consistent with the surface profiles measured by an atomic force microscope.
ISSN:0946-7076
1432-1858
DOI:10.1007/s00542-016-2980-6