Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications

• Published in: Current applied physics Vol. 63; pp. 48 - 55
• Main Authors: Singh, Vivek Pratap, Singh, Chandra Prakash, Ranjan, Harsh, Kumar, Gaurav, Jaiswal, Jyoti, Pandey, Saurabh Kumar
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2024; 한국물리학회
• Subjects: Analog resistive switching (ARS); Cross-cell memristive device; E-beam evaporation; Neuromorphic computing; Synaptic application; 물리학; Cross-cell memristive device; Synaptic application; E-beam evaporation; Analog resistive switching (ARS); Neuromorphic computing
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2024.04.008

Neurotransmitter release in chemical synapses plays a pivotal role in a wide range of essential brain functions, including neural activity (potentiation/depression), learning, cognition, emotion, perception, and consciousness. In this study, we have presented the fabricated cross-cell memristive device that exhibits an analog resistive switching (ARS) device, with Silver (Ag) as active and Platinum (Pt) as inert metal electrodes. The energy bandgap, crystal structure, surface morphology, elemental composition, and electronic properties of the deposited metal-oxide thin film were examined by using UV–Vis spectroscopy, Glancing Angle X-ray diffraction (GAXRD), Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray (EDX), and Raman spectroscopy, respectively. The electrical characteristics of the fabricated resistive switching (RS) device have been studied by the Keithley 4200A SCS parameter analyzer by low triangular DC sweep voltage (-2V/+2V) at room temperature (RT). Furthermore, we have evaluated the outstanding performance of the fabricated cross-cell RS device at a read voltage of 0.1V, and we have also discussed its remarkable linearity. This work will aid researchers in realizing the synaptic behavior of cross-cell devices for neuromorphic computing applications. [Display omitted] •Study of analog resistive switching (ARS) of an Iron-Oxide-based cross-cell memristive device with the configuration Ag/Fe3O4/Pt/Ti/SiO2.•Optimizing the read voltage and achieving excellent linearity for cross-cell memristors in synaptic memristive device applications.•The study of neural activity (potentiation/depression) conducts neuromorphic computing to mimic the functions of the human brain.•Neuromorphic computing mimics biological brain function for information processing, aiming to alleviate the von Neumann architecture bottleneck.