A dC/dV Measurement for Quantum-Dot Light-Emitting Diodes
We present dC / dV analysis based on the capacitance-voltage ( C – V ) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning po...
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Summary: | We present
dC
/
dV
analysis based on the capacitance-voltage (
C
–
V
) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning points and maximum/minimum of the
dC
/
dV
(versus voltage) curve. By the
dC
/
dV
study, the behaviors such as low turn-on voltage, simultaneous electrical and optical turn-on process, and carrier accumulation during the device aging can be well explained. Moreover, we perform the
C
–
V
and
dC
/
dV
measurement of aged devices, and confirm that our
dC
/
dV
analysis is correct for them. Thus, our
dC
/
dV
analysis method can be applied universally for QLED devices. It provides an in-depth understanding of carrier dynamics in QLEDs through simple
C
–
V
measurement. |
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ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/39/12/128401 |