Optical properties of semiconductor in planar plasmonic structures: strong coupling and lasing

• Published in: Semiconductor science and technology Vol. 28; no. 12; pp. 124001 - 124006
• Main Authors: Symonds, C, Lheureux, G, Laverdant, J, Brucoli, G, Plenet, J C, Lemaitre, A, Senellart, P, Bellessa, J
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2013
• Subjects: Chemical Sciences; Engineering Sciences; Physics
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/28/12/124001

In this paper we describe the modifications in the GaAs quantum well (QW) optical properties induced by the proximity of a metallic film. The formation of hybrid plasmon/exciton states composed of a mix of heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. Alternative surface modes, namely Tamm plasmons, can also induce hybridization with the QW excitons with Rabi splitting energy of 11.5 meV. Plasmonic Tamm states are interface modes formed at the boundary between a photonic structure and a metallic layer. These modes present both the advantages of surface plasmons and of microcavities photonic modes. A conventional lasing effect will also be described in Tamm plasmon structure containing QWs. Tamm plasmons can be spatially confined by structuring the metallic part of the system, thus reducing the size of the mode and allowing various geometries. Due to the relatively low damping and the versatility of the Tamm geometries, these modes are good candidates for a new type of lasers.