Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures

A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has been developed. The impurity photoconductivity spectra in strained SiGe/Si:B quantum well heterostructures have been studied experimentally. In...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 340-342; pp. 1065 - 1068
Main Authors Aleshkin, V.Ya, Antonov, A.V., Gavrilenko, V.I., Kozlov, D.V., Krasil’nik, Z.F., Lobanov, D.N., Novikov, A.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.12.2003
Subjects
Acceptor
Photoconductivity
Quantum wells
71.55.−i
Acceptor
Photoconductivity
Quantum wells
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Summary:A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has been developed. The impurity photoconductivity spectra in strained SiGe/Si:B quantum well heterostructures have been studied experimentally. In addition to the photoconductivity band resulting from the photoionization of boron acceptors in the bulk Si a new low-frequency band has been discovered. According to the calculation results the low-frequency band is attributed to the photoexcitation of acceptors in SiGe quantum wells.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2003.09.185