Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures
A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has been developed. The impurity photoconductivity spectra in strained SiGe/Si:B quantum well heterostructures have been studied experimentally. In...
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Published in | Physica. B, Condensed matter Vol. 340-342; pp. 1065 - 1068 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
31.12.2003
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Subjects | |
Online Access | Get full text |
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Summary: | A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has been developed. The impurity photoconductivity spectra in strained SiGe/Si:B quantum well heterostructures have been studied experimentally. In addition to the photoconductivity band resulting from the photoionization of boron acceptors in the bulk Si a new low-frequency band has been discovered. According to the calculation results the low-frequency band is attributed to the photoexcitation of acceptors in SiGe quantum wells. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2003.09.185 |