Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

• Published in: Materials science forum Vol. 963; pp. 722 - 725
• Main Authors: Kozlovski, Vitalii V., Strel'chuk, Anatoly M., Nikitina, Irina P., Zabrodski, Vladimir, Lebedev, Alexander A., Kalinina, Evgenia V.
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 19.07.2019
• Subjects: Chemical vapor deposition; Comparative studies; Efficiency; Electrons; Epitaxial layers; Heat conductivity; Investigations; Materials science; Optical properties; Photodiodes; Photometers; Radiation; Sensors; Silicon carbide; Spectral sensitivity; Temperature; Thickness; Ultraviolet detectors; Ultraviolet radiation; Ultraviolet spectra; Irradiation; Quantum Efficiency; Silicon Carbide; Radiation Defects; Photodetector
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.963.722

Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral range of 200-400 nm were carried out before and after electron irradiations. Photodetectors with Cr Schottky barriers with thickness of 20 nm and 8 mm diameter were formed on n-4H-SiC CVD epitaxial layers with a thickness of 5 μm and concentration Nd-Na= (1-4) х1014 cm-3. Cr/4H-SiC photodiodes were irradiated by electrons at 0.9 MeV energy with doses (0.2-1) x1016 cm-2.