Structural characterisation of self-implanted Si after HT-HP treatment
Recovery of damages in implanted silicon is still not fully understood. In this work, self-implanted silicon Si:Si is a model material. The implantation-damaged area in Si:Si is under high quasi-hydrostatic stress. Therefore, the application of external hydrostatic pressure (HP) at annealing of Si:S...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 124; pp. 170 - 173 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
05.12.2005
|
Subjects | |
Online Access | Get full text |
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Summary: | Recovery of damages in implanted silicon is still not fully understood. In this work, self-implanted silicon Si:Si is a model material. The implantation-damaged area in Si:Si is under high quasi-hydrostatic stress. Therefore, the application of external hydrostatic pressure (HP) at annealing of Si:Si samples gives possibility to obtain valuable information on the stress-related effects during out-annealing of structural damages.
Czochralski grown single crystalline silicon (Cz-Si) samples were subjected to the implantation with Si
+ ions (silicon dose
D
=
5
×
10
16
cm
−2) at 160
keV energy (
E). The Si:Si samples were treated at a high temperature (HT) up to 1130
°C under hydrostatic argon pressure up to 1.1
GPa for 5
h.
Changes in the dielectric function (
ɛ) in both the as-implanted and HT-HP treated silicon samples have been determined. The considerable amelioration of both optical and structural properties of the self-implanted silicon samples for such treatment conditions like pressure,
p
=
1.1
Gpa; temperature,
T
=
800
°C; time,
t
=
5
h has been observed.
For samples treated under 1.1
GPa and for 5
h, both real part (
ɛ
1) and imaginary part (
ɛ
2) of dielectric constant decreased with the increase of temperature in all spectral range.
The agreement between results obtained by spectroscopic ellipsometry (SE) and other optical techniques has been found. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2005.08.027 |