Vibrational lifetime of bond-center hydrogen in crystalline silicon

The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8+/-0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasi...

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Bibliographic Details
Published inPhysical review letters Vol. 85; no. 7; p. 1452
Main Authors Budde, M, Lupke, G, Parks Cheney C, Tolk, NH, Feldman, LC
Format Journal Article
LanguageEnglish
Published United States 14.08.2000
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Summary:The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8+/-0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasing hydrogen concentration C(H), and nearly coincides with the natural width for C(H) approximately 1 ppm. The lifetimes of the Si-H stretch modes of selected hydrogen-related defects are estimated from their spectral widths and shown to range from 1.6 to more than 37 ps.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.85.1452