Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 535; pp. 198 - 201
Main Authors Venter, Danielle, Bollmann, Joachim, Elborg, Martin, Botha, J.R., Venter, André
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.04.2018
Elsevier BV
Subjects
Admittance spectroscopy
Computer simulation
Deep level transient spectroscopy
Electric power
Electrical impedance
Electrical properties
Embedded structures
Epitaxial growth
GaNAs/GaAs
Molecular beam epitaxy
Molecular beams
Molecular chains
Photovoltaic cells
Quantum phenomena
Quantum theory
Quantum wells
Simulation
Software
Solar cells
Spectroscopic analysis
Spectrum analysis
Deep level transient spectroscopy
Admittance spectroscopy
Quantum wells
GaNAs/GaAs
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Summary:In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2017.07.036