Improvement of Electrical Performance of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors
In this study, we present a new method named seed-induced lateral crystallization (SILC), wherein the Ni that is deposited on amorphous silicon (a-Si) is removed prior to crystallization. The newly developed polycrystalline silicon (poly-Si) thin-film transistor (TFT) exhibits a field effect mobilit...
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Published in | Journal of the Electrochemical Society Vol. 159; no. 4; pp. J115 - J121 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Electrochemical Society, Inc
01.01.2012
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Online Access | Get full text |
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Summary: | In this study, we present a new method named seed-induced lateral crystallization (SILC), wherein the Ni that is deposited on amorphous silicon (a-Si) is removed prior to crystallization. The newly developed polycrystalline silicon (poly-Si) thin-film transistor (TFT) exhibits a field effect mobility of 63 cm2/V-s, leakage current of 7.9 × 10−11 A, slope of 0.8 V/dec, Ion of 2.8 × 10−4 A at VD = 10 V, and VTH of 5.5 V. The leakage current has been reduced by an order of magnitude as compared with conventional metal-induced lateral crystallized (MILC) poly-Si TFTs, in which Ni is removed after the crystallization. In order to materials analysis, Raman scattering spectroscopy and field emission scanning electron microscopy (FESEM) was used. Since a batch process is possible in MILC technology, it is more advantageous than the excimer laser annealing (ELA) technology for mass production of a large size display. Since SILC TFT shows a leakage current comparable to an ELA poly-Si TFT, its application to the mass production of AMOLED display is expected have a substantial impact on the industry. |
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Bibliography: | 078204JES |
ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/2.078204jes |