Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction

• Published in: Physica. B, Condensed matter Vol. 550; pp. 68 - 74
• Main Authors: Karabulut, Abdulkerim, Orak, İkram, Canlı, Serdal, Yıldırım, Nezir, Türüt, Abdulmecit
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2018; Elsevier BV
• Subjects: Alq3; Aluminum; Electrical characteristics; Electrical measurement; Electronics; Heterojunction; Heterojunctions; Morphology; Organic interfacial layer; Organic materials; Parameters; Scanning electron microscopy; Silicon; Spin coating; Temperature dependence; Temperature effects; Thermionic emission; Electrical characteristics; Alq3; Organic interfacial layer; Spin coating; Heterojunction
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2018.08.029

Al/Alq3(organic materials)/p-Si device was fabricated by the use of spin coating technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320 K with 20 K steps. Some device parameters such as ideality factor, barrier height and series resistance values were determined by the use of standard thermionic emission theory and Norde functions, and the values found were compared with other studies. It was seen that all parameters of fabricated device strongly depended on temperature changes. AFM and SEM images were taken for better understanding surface morphology, and addressed in detail. The results of experiments suggest that the fabricated device with Alq3 organic interfacial layer could be used effectively in the temperature-dependent device applications for developing electronic technology. •Al/Alq3/p-Si/Al structure was fabricated.•Alq3 film was coated on p-Si by using spin coating.•AFM and SEM images were analyzed to investigate of Alq3 surface morphology.•Temperature dependent current-voltage characteristics were reported.•Frequency dependent capacitance-voltage characteristics were studied.