A model for the bipolar-like response of GaAs MESFETs to a high dose rate environment

A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to th...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 41; no. 6; pp. 2494 - 2501
Main Authors Islam, N.E., Howard, J.W., Fageeha, O., Block, R.C., Becker, M.
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York, NY IEEE 01.12.1994
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Bipolar transistors
Circuits
Electronics
Electrons
Exact sciences and technology
Gallium arsenide
Geometry
Linear particle accelerator
Material properties
MESFETs
Optical pulses
Physics
Testing, measurement, noise and reliability
Gallium Arsenides
Radiation resistance
Binary compound
Electron irradiation
Integrated circuit
Theoretical study
Numerical simulation
Reliability
Metal semiconductor field effect transistor
High dose
III-V compound
Geometrical factor
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Summary:A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.340607