A model for the bipolar-like response of GaAs MESFETs to a high dose rate environment
A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to th...
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Published in | IEEE transactions on nuclear science Vol. 41; no. 6; pp. 2494 - 2501 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
New York, NY
IEEE
01.12.1994
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/23.340607 |