TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

We present the results of a conventional and high-resolution electron microscopy investigation of thick (up to 15 m) semipolar GaN layers grown on Si(001) offcut substrates with 3C-SiC and AlN buffer layers. GaN and AlN layers have been grown by chloride vapor phase epitaxy. The silicon carbide buff...

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Published inSemiconductor science and technology Vol. 30; no. 11; pp. 114002 - 114007
Main Authors Sorokin, L M, Myasoedov, A V, Kalmykov, A E, Kirilenko, D A, Bessolov, V N, Kukushkin, S A
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2015
Subjects
gallium nitride
microscopy
semi-polar
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Summary:We present the results of a conventional and high-resolution electron microscopy investigation of thick (up to 15 m) semipolar GaN layers grown on Si(001) offcut substrates with 3C-SiC and AlN buffer layers. GaN and AlN layers have been grown by chloride vapor phase epitaxy. The silicon carbide buffer layers were produced by a new method of solid-phase synthesis on 4 and 7° offcut Si(001) substrates. It is shown that the use of solid-phase synthesis for the formation of SiC layer allows one to grow a semipolar GaN layer. The asymmetrical defect structure of the semipolar layer is revealed.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/30/11/114002