Characterization results of a HVCMOS sensor for ATLAS

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 936; pp. 654 - 656
• Main Authors: Ehrler, F., Benoit, M., Dannheim, D., Kiehn, M., Nürnberg, A., Perić, I., Prathapan, M., Schimassek, R., Vanat, T., Vicente, M., Weber, A., Zhang, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 21.08.2019
• Subjects: HVCMOS; HVMAPS; IsoPMOS; PPtB; Time walk correction by adaptive ToT; ATLAS; HVMAPS; IsoPMOS; PPtB; HVCMOS; Time walk correction by adaptive ToT
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2018.08.069

High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [1], HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix_Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate. •The ATLASpix_Simple monolithic sensor works as expected with an efficiency of >99%.•Time-over-Threshold was measured with a novel adaptive sampling method.•It has been shown that Time-over-Threshold can be used to compensate for time walk.