Frequency dependent dielectric properties of atomic layer deposition grown zinc-oxide based MIS structure

• Published in: Physica. B, Condensed matter Vol. 568; pp. 31 - 35
• Main Authors: Efil, E., Kaymak, N., Seven, E., Tataroğlu, A., Ocak, S. Bilge, Orhan, E.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2019; Elsevier BV
• Subjects: Aluminum; Atomic layer epitaxy; Atomic properties; Conductivity, dielectric properties; Depletion; Dielectric loss; Dielectric properties; Electric modulus; Electric potential; Electrical resistivity; Frequency ranges; Insulators; Metal-insulator-semiconductor (MIS) structure; MIS (semiconductors); Semiconductors; Silicon; Voltage; Zinc oxide; Zinc oxides; Metal-insulator-semiconductor (MIS) structure; Conductivity, dielectric properties; Electric modulus
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2019.05.016

Frequency dependent dielectric properties of zinc oxide (ZnO) based metal-insulator-semiconductor (MIS) structure were analyzed in a wide frequency range. The ZnO thin layer on p-type silicon (100) was prepared by using atomic layer deposition (ALD). Dielectric parameters such as dielectric constant (ε′), dielectric loss (ε''), dielectric loss tangent (tanδ), electrical conductivity (σac) and complex electrical modulus (M∗ = M'+iM″) of this structure have been studied in depth by using spectroscopic technique in the different applied bias voltages and frequencies under the room temperature condition. According to experimental results, ε′, ε'', tanδ, σac, M′ and M″ values were strongly depended on the applied voltage and the frequency in accumulation and depletion region. While the values of ε′ reduce with rising frequency for each applied voltage, ε'' values reduce with rising frequency and decreasing voltage. The σac is observed to weak increase with rising frequency. M′ values go up by rising frequency. M″ values give a peak and the peak location moves to higher frequency by rising applied voltage. The experimental values confirmed that interfacial polarization can be readily ingenerated at low frequency and interface states located in the metal-semiconductor interface have an influence on the dielectric characteristics of Al/ZnO/p-Si MIS structures. •The ZnO thin layer on p-Si substrate was prepared by using atomic layer deposition (ALD).•Frequency dependent dielectric properties of ZnO based MIS structure were analyzed in a wide frequency range.•The dielectric behavior of the MIS structure have been thoroughly investigated by using spectroscopic technique.•ε′, ε″, tanδ, σac, M′ and M″ values were calculated from the measured capacitance and conductance data.•The experimental values confirmed that interfacial polarization can be readily occurred at low frequency.