Material transport in high-pressure diode sputtering

The effect of gas pressure and re-emission of sputtered species from the electrodes on the deposition rate of these species is considered theoretically. It is shown that increase of gas pressure makes the deposition rate comparatively insensitive to re-emission of sputtered material from both electr...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 26; no. 4; pp. 711 - 712
Main Authors Hollmann, E K, Zaitsev, A G
Format Journal Article
LanguageEnglish
Published IOP Publishing 14.04.1993
Subjects
Diodes
Electrodes
Electron emission
Film preparation
High pressure effects
Mathematical models
Sputter deposition
Sputtering
Thin films
Transport properties
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Summary:The effect of gas pressure and re-emission of sputtered species from the electrodes on the deposition rate of these species is considered theoretically. It is shown that increase of gas pressure makes the deposition rate comparatively insensitive to re-emission of sputtered material from both electrodes. This provides the principal advantage for multi-component thin-film preparation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/26/4/028