Si nanocrystals formation by a new ion implantation device

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 266; no. 10; pp. 2486 - 2489
• Main Authors: Lorusso, A., Nassisi, V., Velardi, L., Congedo, G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2008
• Subjects: Faraday cup; Ion implantation; Laser-produced plasma; Silicon nanocrystals; Silicon nanocrystals; Ion implantation; 52.50.Dg; Laser-produced plasma; Faraday cup; 52.38.Mf; 52.38.Kd; 52.77.Dq
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2008.03.030

Metallic and non-metallic ion beams can be used to modify the properties of wafer surfaces if accelerated at moderate energies. We developed a new “implantation machine” able to generate ions and to accelerate them up to 80kV. The ion generation is achieved by a laser-plasma source which creates plasma in expansion. The device consists of a KrF excimer laser and a generating vacuum chamber made of stainless steel. The laser energy was 45mJ/pulse with a power density of 2.25×108W/cm2. The target was kept to positive voltage to accelerate the produced ions. The ion dose was estimated by a fast polarised Faraday cup. This machine was utilised to try synthesizing silicon nanocrystals in SiO2 matrix. Preliminary results of Si nanocrystals formation and the glancing-angle X-ray diffraction analyses are reported.