Enhanced ambipolar charge transport in staggered carbon nanotube field-effect transistors for printed complementary-like circuits

• Published in: Current applied physics Vol. 17; no. 4; pp. 541 - 547
• Main Authors: Baeg, Kang-Jun, Jeong, Hee Jin, Jeong, Seung Yol, Han, Joong Tark, Lee, Geon-Woong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2017; 한국물리학회
• Subjects: Ambipolar; Carbon nanotubes; Complementary-like circuits; Field-effect transistors; Polymer semiconductors; 물리학; Carbon nanotubes; Polymer semiconductors; Ambipolar; Field-effect transistors; Complementary-like circuits
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2017.01.024

Semiconducting single-walled carbon nanotubes (semi-SWNTs) are attractive as they can be used enable high-performance nano-electronic devices. We report the enhanced ambipolar charge transport characteristics of the semi-SWNT field-effect transistors (FETs) based on a top-gated staggered device structure. SWNTs were selectively dispersed in non-polar organic solvents and sorted by a π-conjugated polymer wrapping method. The sorted semi-SWNTs solution was used simply to form a well-percolated CNT-network, and the top-gate and bottom-contact FETs showed relatively high and equivalent electron and hole mobilities with very high on/off-current ratios and steep subthreshold slopes. The equivalent ambipolar charge transport behavior of semi-SWNTs was used to demonstrate a reliable complementary-like electronic circuits. The inverters showed a good switching threshold near the ideal point at half the driving bias, high gain, low hysteresis, and stability under repeatable operating conditions. They can thus be broadly applied as a fundamental circuit element in printed and flexible electronics. [Display omitted] •Enhanced ambipolar charge transport characteristics of the semi-SWNT field-effect transistors (FETs) based on a top-gated staggered device structure.•The top-gate and bottom-contact FETs showed relatively high and equivalent electron and hole mobilities with very high on/off-current ratios and steep subthreshold slopes.•A reliable complementary-like electronic circuit based on the equivalent ambipolar charge transport behavior of semi-SWNTs.