Oxygen resistant strain of N2-fixing Escherichia coli
Oxygen resistant N2-fixing Escherichia coli, which can grow at a high oxygen concentration in a nitrogen-free medium, were produced by several times of cultivation under a condition of 0.03% oxygen. Six isolated resistant strains could grow at an oxygen concentration ten times that of the parent str...
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Published in | Biochemical and biophysical research communications Vol. 168; no. 1; pp. 288 - 294 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
San Diego, CA
Elsevier
16.04.1990
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Subjects | |
Online Access | Get full text |
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Summary: | Oxygen resistant N2-fixing Escherichia coli, which can grow at a high oxygen concentration in a nitrogen-free medium, were produced by several times of cultivation under a condition of 0.03% oxygen. Six isolated resistant strains could grow at an oxygen concentration ten times that of the parent strain. The nif-genes of these six strains were integrated into a chromosome. At low oxygen, they showed one third the nitrogenase activity to the parent strain, but more so at a high oxygen concentration. It is thus evident that the amount of nitrogenase protein in a cell is a factor determining the oxygen resistance of nitrogenase. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0006-291X 1090-2104 |
DOI: | 10.1016/0006-291X(90)91706-X |