Oxygen resistant strain of N2-fixing Escherichia coli

Oxygen resistant N2-fixing Escherichia coli, which can grow at a high oxygen concentration in a nitrogen-free medium, were produced by several times of cultivation under a condition of 0.03% oxygen. Six isolated resistant strains could grow at an oxygen concentration ten times that of the parent str...

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Published inBiochemical and biophysical research communications Vol. 168; no. 1; pp. 288 - 294
Main Authors IWAHASHI, H, SOMEYA, J
Format Journal Article
LanguageEnglish
Published San Diego, CA Elsevier 16.04.1990
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Summary:Oxygen resistant N2-fixing Escherichia coli, which can grow at a high oxygen concentration in a nitrogen-free medium, were produced by several times of cultivation under a condition of 0.03% oxygen. Six isolated resistant strains could grow at an oxygen concentration ten times that of the parent strain. The nif-genes of these six strains were integrated into a chromosome. At low oxygen, they showed one third the nitrogenase activity to the parent strain, but more so at a high oxygen concentration. It is thus evident that the amount of nitrogenase protein in a cell is a factor determining the oxygen resistance of nitrogenase.
Bibliography:ObjectType-Article-1
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ISSN:0006-291X
1090-2104
DOI:10.1016/0006-291X(90)91706-X