High fluence nitrogen implantation in Al/Ti multilayers

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 266; no. 10; pp. 2503 - 2506
• Main Authors: Peruško, D., Milosavljević, M., Milinović, V., Timotijević, B., Zalar, A., Kovač, J., Praček, B., Jeynes, C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2008
• Subjects: AES; Al/Ti multilayers; Hard coatings; Ion implantation; RBS; TEM; Ion implantation; RBS; Hard coatings; 61.80.−x; 61.46.−w; 61.72. Ww; Al/Ti multilayers; TEM; AES
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2008.03.034

We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270nm, on (100) Si substrates. They were implanted with 200keV N2+, to 1×1017 and 2×1017at/cm2, the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (Al,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al–Ti intermixing within the structures.