Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
Electroluminescence (EL) at 1.54 μm of reverse biased Si:Er diodes grown by sublimation molecular-beam epitaxy has been investigated as a function of temperature in the range of 80–300 K. An erbium electroluminescence trend versus temperature is shown to be determined by the p–n junction breakdown m...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 146; no. 1; pp. 256 - 259 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.01.2008
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Subjects | |
Online Access | Get full text |
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Summary: | Electroluminescence (EL) at 1.54
μm of reverse biased Si:Er diodes grown by sublimation molecular-beam epitaxy has been investigated as a function of temperature in the range of 80–300
K. An erbium electroluminescence trend versus temperature is shown to be determined by the p–n junction breakdown mechanism: we observe the EL quenching in light emitting diodes (LEDs) exhibiting a tunnel p–n junction breakdown and EL increase with temperature in diodes exhibiting an avalanche one. LEDs exhibiting a mixed p–n junction breakdown show rather weak dependence of erbium EL on temperature. We connect the temperature-induced increase in erbium EL observed in the avalanche LEDs with increase in EL pumping efficiency due to improved p–n junction breakdown homogeneity at higher temperatures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2007.07.076 |