Structural and Mechanical Properties of Zr-Si-N Coatings Deposited by Arc Evaporation at Different Substrate Bias Voltages

ZrN and Zr-Si-N coatings were formed using vacuum-arc plasma fluxes deposition system at the substrate bias voltage (U B ) ranged from − 50 to − 220 V on HS6-5-2 steel substrates. The structural, mechanical and tribological properties were characterized using x-ray diffraction, atomic force microsco...

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Bibliographic Details
Published inJournal of materials engineering and performance Vol. 27; no. 8; pp. 3940 - 3950
Main Authors Warcholinski, B., Kuznetsova, T. A., Gilewicz, A., Zubar, T. I., Lapitskaya, V. A., Chizhik, S. A., Komarov, A. I., Komarova, V. I., Kuprin, A. S., Ovcharenko, V. D., Goltvyanytsya, V. S.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.08.2018
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Summary:ZrN and Zr-Si-N coatings were formed using vacuum-arc plasma fluxes deposition system at the substrate bias voltage (U B ) ranged from − 50 to − 220 V on HS6-5-2 steel substrates. The structural, mechanical and tribological properties were characterized using x-ray diffraction, atomic force microscopy, scanning electron microscopy, optical microscopy, nanoindentation and ball-on-disk test. The surface roughness parameter Ra of ZrN coatings is lower than Zr-Si-N coatings. Both roughness Ra of Zr-Si-N coatings and the number of surface defects with mainly small dimensions to 1 µm decrease with increasing negative substrate bias voltage. The addition of silicon to ZrN significantly reduces the crystallite size, from about 18.3 nm for ZrN coating to 6.4 nm for Zr-Si-N coating both deposited at the same U B  = − 100 V and 7.8 nm for U B  = − 150 V. The hardness of Zr-Si-N coatings increases to about 30 GPa with the increase in negative substrate bias voltage (U B  = − 220 V). Adhesion of the coatings tested is high, and critical load is above 80 N and reduces with U B increase. Coefficient of friction determined using AFM shows similar trend as surface roughness in microscale.
ISSN:1059-9495
1544-1024
DOI:10.1007/s11665-018-3483-7