Tunable anisotropic pulse photo response of ZrS3 crystal at cryogenic temperatures

• Published in: Physica. B, Condensed matter Vol. 633; p. 413775
• Main Authors: Patel, Anand, Patel, Kunjal, Limberkar, Chaitanya, Jethwa, Vibhutiba, Patel, K.D., Solanki, G.K., Pathak, V.M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.05.2022; Elsevier BV
• Subjects: Anisotropy; Cryogenic temperature; Crystal growth; Device fabrication; Electrical equipment; Electronic devices; Light sources; Low temperature; Low temperature physics; Mechanical properties; Optoelectronic devices; Optoelectronics; Pulse photoresponse; Transition metal compounds; Trichalcogenides; Crystal growth; Pulse photoresponse; Trichalcogenides; Anisotropy; Device fabrication; Low temperature
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2022.413775

Two-dimensional (2D) transition metal trichalcogenides (TMTCs) have been considered promising candidates for next-generation electronic devices. TMTCs containing quasi-one-dimensional chain structure, in contrast to two-dimensional (2D) Transition Metal Dichalcogenides (TMDCs), provide significant advantages in electronics and optoelectronics device modeling and engineering to enhance device performance. In this study, we present a pulse photoresponse application of a device based on the DVT-grown ZrS3 crystal at different cryogenic temperatures. It also includes anisotropy produced due to the layered growth of the TMC materials. Two types of contact arrangements were made to verify the anisotropic behaviour. The device was illuminated under light sources having different wavelengths (Blue-470 nm, Green-540 nm and Red-670 nm). It shows good stability under ambient conditions towards the variable wavelength source in both types of contact arrangements. The results indicate that ZrS3 is a potential candidate for optoelectronic devices even in uncommon conditions. •The ZrS3 single crystals were grown by direct vapor transport technique.•The anisotropic photo response studies were carried out employing 470 nm, 540 nm and 670 nm wavelengths.•The grown material was explored for photodetection properties in low temperature condition ranging from 300 K–180 K.